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savantic semiconductor product specification silicon pnp power transistors 2SA900 d escription with to-126 package complement to type 2sc1568 low collector saturation voltage applications for audio frequency power amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -20 v v ceo collector-emitter voltage open base -18 v v ebo emitter-base voltage open collector -5 v i c collector current -1 a i cm collector current-peak -2 a p c collector power dissipation t c =25 1.2 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA900 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma;i b =0 -18 v v (br)cbo collector-base breakdown voltage i c =-10a ;i e =0 -20 v v (br)ebo emitter-base breakdown voltage i e =-10a ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-1a ;i b =-50ma -0.5 v v besat base-emitter saturation voltage i c =-500ma ;i b =-50ma -1.2 v i cbo collector cut-off current v cb =-10v; i e =0 -1 a i ceo collector cut-off current v ce =-18v; i b =0 -10 a h fe-1 dc current gain i c =-500ma ; v ce =-2v 90 470 h fe-2 dc current gain i c =-1.5a ; v ce =-2v 50 c ob output capacitance i e =0 ; v cb =-6v;f=1mhz 40 pf f t transition frequency i e =50ma ; v cb =-6v 200 mhz h fe-1 classifications q r s t u 90-155 130-210 180-280 250-360 330-470
savantic semiconductor product specification 3 silicon pnp power transistors 2SA900 package outline fig.2 outline dimensions

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